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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2409 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2409 is N-Channel MOS Field Effect Transistor designed for solenoid, motor, and lamp driver. PACKAGE DIMENSION (in millimeters) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES * Low On-Resistance RDS(on) 27 m (VGS = 10 V, ID = 20 A) 15.0 0.3 RDS(on) 40 m (VGS = 4 V, ID = 20 A) QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Device" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 2.54 0.7 0.1 4 0.2 13.5 MIN. 12.0 0.2 * Low Ciss Ciss = 2040 pF TYP. * Built-in Gate Protection Diode 3 0.1 1.3 0.2 1.5 0.2 2.54 2.5 0.1 0.65 0.1 1. Gate 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID(DC) ID(pulse)* 60 20 40 160 2.0 35 150 40 160 V V A A W W C Gate Drain 123 MP-45F (ISOLATED TO-220) Total Power Dissipation (Ta = 25 C) PT1 Total Power Dissipation (Tc = 25 C) PT2 Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy * PW 10 s, Duty Cycle 1 % Tch Tstg IAS** EAS** -55 to +150 C A mJ Body Diode Gate Protection Diode Source ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 The information in this document is subject to change without notice. Document No. TC-2489 (O. D. No. TC-8028) Date Published September 1994 P Printed in Japan (c) 1994 2SK2409 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC Drain to Source On-State Resistance Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Cutoff Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 2040 1080 300 30 350 210 260 72 6.0 24 1.1 110 360 1.0 20 MIN. TYP. 22 30 1.5 35 10 10 MAX. 27 40 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 20 A VGS = 4 V, ID = 20 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 20 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 20 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 40 A VDD = 48 V VGS = 10 V IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 di/dt = 100 A/s A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time DUT RG = 25 PG VGS = 20 0 V 50 L VDD PG. DUT RL RG RG = 10 VDD VGS Wave Form VGS 0 ID 10 % VGS(on) 90 % 90 % 90 % 10 % BVDSS IAS ID VDD VDS VGS 0 t t = 1 s Duty Cycle 1% ID Wave Form ID 10 % 0 td (on) ton tr td (off) toff tf Starting Tch Test Circuit 3 Gate Charge DUT IG = 2 mA 50 RL VDD PG. 2 2SK2409 TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 100 PT - Total Power Dissipation - W 50 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 40 60 40 30 20 20 10 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tc - Case Temperature - C Tc - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V = s FORWARD BIAS SAFE OPERATING AREA 1000 PW d ite V) im 10 )L = on S S( RD t VG (a ID(DC) Pulsed ID - Drain Current - A ID(pulse) ID - Drain Current - A 10 100 80 60 40 20 VGS = 6 V 100 10 1 20 10 0 m m s m 0 s s VGS = 4 V Po w 10 er Di ss DC ip at io n Li s 1 0.1 TC = 25 C Single Pulse m ite d 1 10 100 0 4 8 12 16 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS=10 V ID - Drain Current - A 100 10 Ta = -25 C 25 C 125 C 1 0 5 VGS - Gate to Source Voltage - V 10 3 2SK2409 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W Rth (ch-a) = 62.5 C/W 100 10 1 Rth (ch-c) = 3.75 C/W 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s RDS (on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 IyfsI - Forward Transfer Admittance - S Ta = -25 C 25 C 75 C 125 C VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed 50 40 30 ID = 20 A 20 10 100 10 1 1 10 ID - Drain Current - A 100 0 10 20 30 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA RDS (on) - Drain to Source On-State Resistance - m 60 50 40 VGS = 4 V 30 VGS = 10 V 20 10 0 Pulsed VGS (off) - Gate to Source Cutoff Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.5 1.0 0.5 1 10 ID - Drain Current - A 100 0 -50 0 50 100 150 Tch - Channel Temperature - C 4 2SK2409 RDS (on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 ISD - Diode Forward Current - A 1000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 60 100 10 V 10 VGS = 0 40 VGS = 4 V VGS = 10 V 20 ID = 20 A 0 -50 0 50 100 150 1 0 1.0 2.0 3.0 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns td(off) 100 tf tr 10000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz 1000 Coss Crss 100 Ciss 10 td(on) VDD = 30 V VGS = 10 V RG = 10 100 10 1 10 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns di/dt = 50 A/s VGS = 0 100 1.0 0.1 1.0 10 ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 ID = 40 A VDD = 48 V 16 VGS - Gate to Source Voltage - V 14 12 VDS 40 VGS 10 8 6 20 4 2 0 20 40 60 80 60 100 10 0.1 1.0 10 100 ID - Drain Current - A Qg - Gate Change - nC 5 2SK2409 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Energy - mJ dt- Energy Derating Factor - % IAS = 40 V 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 VGS = 20 V 0 IAS 40 A EAS 10 80 =1 60 mJ 60 40 1.0 VDD = 30 V VGS = 20 V 0 RG = 25 10 100 20 0 25 1m 10 m 50 75 100 125 150 L - Inductive Load - H Stating Tch - Starting Channel Temperature - C 6 2SK2409 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 7 2SK2409 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 |
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